Erratum: Quantum‐Mechanical Reflection of Electrons at Metal‐Semiconductor Barriers: Electron Transport in Semiconductor‐Metal‐Semiconductor Structures
نویسندگان
چکیده
منابع مشابه
Defect-Enhanced Electron Transport through Semiconductor Barriers
It has often been suggested that defects can enhance electron tunneling through barriers. Here, we derive a general expression of the current flowing through semiconductor barriers when induced by the presence of defects, taking into account tunneling and other possible mechanisms. Therefore, we calculate the capture probability of free electrons by defects located in the barrier and the subseq...
متن کاملElectron Transport Through Molecular Structures
Electron transport through molecular structures is investigated with three different concepts. Polythiophenyl substituted benzenes were studied as reducible substructures in molecular architectures. By linking two reducible substructures with different bridging motives the potential of the bridging structure as electronic connector was investigated. Diacetylene turned out to be the most promisi...
متن کاملGlobal Plasma Oscillations in Electron Internal Transport Barriers in TCV
Global plasma oscillations have been observed in the Tokamak à Configuration Variable (TCV; R/a=0.88m/ 0.25m, BT<1.54T) in reversed magnetic shear discharges (fully non-inductive driven) with electron Internal Transport Barriers (eITBs). These slow oscillations involve the electron temperature and density and the plasma current. The triggering mechanism is the periodic destabilisation and stabi...
متن کاملDynamics of Electrons in Free Electron Laser with Square Core Waveguides
Due to sensitive and important applications of free-electron laser in industry and medicine, improvement of the power and efficiency of laser has always been emphasized. Therefore, understanding the created field and examining the properties of the field in waveguides with different shapes and studying the sustainability of electrons movement are particularly important. In this study, the beh...
متن کاملInterpretation of negative central shear electron internal transport barriers
Box-type electron temperature profiles observed in negative central shear plasmas with electron internal transport barriers are explained with the help of a novel instability mechanism that is predicted when keeping account of the radial component of the trapped electron gradB and curvature drifts in the theory of the trapped electron mode. These radial velocity components lead to a new term in...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1968
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1656915